当社の
3次元TCADソフトウェア Advance/TCAD のユーザー様が、Advance/TCAD を用いた研究成果を発表されました。
- Jun-ichi Matsuda, Jun-ya Kojima, Nobukazu Tsukiji, Masataka Kamiyama and Haruo Kobayashi, "Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low Specific On-Resistance", Proceedings of 2nd International Conference on Technology and Social Science 2018 Kiryu, Japan, Apr. 18-20, 2018.
- Toshiyuki Tsutsumi, Takeshi Nakamura, Norihiro Yokoyama and Shota Fukuoka, "Accurate analysis of top gate effect of a typical triple-gate fin-type FET using three-dimensional device simulation", Japanese Journal of Applied Physics 55.6S1, 06GG09, 2016. [Abstract ]
- Toshiyuki Tsutsumi, "Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations", Japanese Journal of Applied Physics 56.6S1, 06GF12, 2017. [Abstract ]
- Toshiyuki Tsutsumi, "Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations", Japanese Journal of Applied Physics 57.6S1, 06HC06, 2018. [Abstract ]
- 村上 裕章, 酒井 正俊, 岡田 悠悟, 山内 博, 貞光 雄一, 橋本 雄太, 工藤 一浩, "ペンタセンTFT構造のタイムドメインリフレクトメトリ ", 第65回応用物理学会春季学術講演会, 20a-D102-6, 2018年3月5日.