ユーザー様が Advance/TCAD を用いた研究成果を発表されました。

当社の
半導体デバイス3次元TCADシステム　Advance/TCAD のユーザー様、明治大学　 教授　堤 利幸 様が、

Advance/TCAD を用いた研究成果
を発表されました。

1. Toshiyuki Tsutsumi and Jaeyup Lee,
   "Study of threshold voltage fluctuation caused by source and drain extensions
   doping variation of tri-gate fin-type FET using three-dimensional device simulation",
   2014 Japanese Journal of Applied Physics, 53, 06JE06.
   [Abstract]
2. Toshiyuki Tsutsumi,
   "Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation
   to source and drain extensions",
   2019 Japanese Journal of Applied Physics 58, SDDE06.
   [Abstract]
3. Toshiyuki Tsutsumi,
   "Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator
   triple-gate fin-type field-effect transistors",
   2020 Japanese Journal of Applied Physics 59, SIIE06.
   [Abstract]